By Topic

THz radiation from InAs surfaces with photonic crystal structures under optical excitation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chul Kang ; Adv. Photonics Res. Inst., GIST, Gwangju, South Korea ; Hyung Keun Yoo ; Ik-Bu Sohn ; Chul-Sik Kee

We investigated the characteristics of THz radiation from a n-type InAs wafer with a triangular array of air holes under optical excitation. The periodic array of air holes was introduced by a femtosecond laser machining technique. We observed the power enhancement of THz radiation from the InAs surface surrounded by the air holes in a frequency range.

Published in:

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Date of Conference:

5-10 Sept. 2010