Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Electrical properties of VOx bolometer thin films prepared by metal-organic decomposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Son, L.N. ; Nat. Defense Acad., Yokosuka, Japan ; Tachiki, T. ; Uchida, T.

Well axis-oriented V2O5 thin films were fabricated by MOD. V2O5 films were reduced to VOx films under a temperature of 530°C and pressures of 1.2-3.0 Pa in O2. VOx films indicated an abrupt transition around 55°C with a resistivity change of 3 orders and TCR of 2.1-2.2 %/K at 300 K.

Published in:

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Date of Conference:

5-10 Sept. 2010