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Electrical properties of VOx bolometer thin films prepared by metal-organic decomposition

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3 Author(s)
L. N. Son ; National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan ; T. Tachiki ; T. Uchida

Well axis-oriented V2O5 thin films were fabricated by MOD. V2O5 films were reduced to VOx films under a temperature of 530°C and pressures of 1.2-3.0 Pa in O2. VOx films indicated an abrupt transition around 55°C with a resistivity change of 3 orders and TCR of 2.1-2.2 %/K at 300 K.

Published in:

35th International Conference on Infrared, Millimeter, and Terahertz Waves

Date of Conference:

5-10 Sept. 2010