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Transport properties of free carriers in semiconductors studied by THz time-domain magneto-optical spectroscopic ellipsometry

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4 Author(s)
Kenichi, Y. ; Inst. of Laser Eng., Osaka Univ., Suita, Japan ; Matsumoto, N. ; Nagashima, T. ; Hangyo, M.

We have developed a technique to deduce effective mass, density and scattering time of free carriers independently with each other by using THz time-domain magneto-optical spectroscopic ellipsometry. The derivation of these parameters for three undoped n-type InAs wafers of different carrier density are demonstrated.

Published in:

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Date of Conference:

5-10 Sept. 2010