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Terahertz luminescence under continuous wave interband excitation of semiconductors

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3 Author(s)
A. V. Andrianov ; A. F. Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia ; A. O. Zakhar'in ; N. N. Zinov'ev

We report on the observation of efficient terahertz emission from semiconductors (n-GaAs) under continuous-wave interband excitation at liquid helium temperatures. The radiative transitions occur under relaxation and trapping of photoexcited electrons to charged donor centers. The external quantum yield of the emission is up to 0.3%.

Published in:

35th International Conference on Infrared, Millimeter, and Terahertz Waves

Date of Conference:

5-10 Sept. 2010