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A 2.4 GHz fully integrated CMOS power amplifier using capacitive cross-coupling

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4 Author(s)
JeeYoung Hong ; Department of Physical Electronics, Tokyo Institute of Technology 2-12-1-S3-27, Ookayama, Meguro-ku, 152-8552 Japan ; Daisuke Imanishi ; Kenichi Okada ; Akira Matsuzawa

The paper presented a 2.4GHz fully integrated CMOS power amplifier using capacitive cross-coupling, fabricated in 0.18μm CMOS. With a 3.3-V supply voltage, PAEmax and PAE at 1 dB compression point are 34.3% and 26.8%. P1dB, Psat, and PG are 25.2dBm, 27.7dBm and 26.5dB, respectively. The advantages of the proposed capacitive-cross-coupled PA are the improvement of reverse isolation and the area saving.

Published in:

Wireless Information Technology and Systems (ICWITS), 2010 IEEE International Conference on

Date of Conference:

Aug. 28 2010-Sept. 3 2010