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High-frequency lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap

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5 Author(s)
Kadota, M. ; Murata Manuf. Co., Ltd., Kyoto, Japan ; Ogami, T. ; Yamamoto, K. ; Tochishita, H.
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High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO3 thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO3 single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO3 film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14 000 and 12 500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH0) and symmetric (S0) modes.

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Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:57 ,  Issue: 11 )