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High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process

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7 Author(s)
Yi Song ; Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China ; Huajie Zhou ; Qiuxia Xu ; Niu, Jiebin
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In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33-nm gate length and 7-nm diameter shows the highest driving current (Ion = 2500 μA/μm at Vds = Vgs = 1.0 V) among previously reported data and achieves high Ion/Ioff ratio of 105, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 12 )

Date of Publication:

Dec. 2010

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