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Strain Effect of the Dielectric Constant in Silicon Dioxide

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5 Author(s)
Jian-Qiu Huang ; Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, China ; Qing-An Huang ; Ming Qin ; Weijie Dong
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The effect of mechanical stress on the dielectric constant of is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M12. According to the measurements, the dielectric constant changes linearly with the stress. The value of is shown to be -(0.19 ± 0.01) × 10-21 m2/V2. The mechanism underlying the phenomena is discussed.

Published in:

Journal of Microelectromechanical Systems  (Volume:19 ,  Issue: 6 )