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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:57 Issue:11 Help

An Analytical I – V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

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7 Author(s)
Roldan, J.B. ; Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain ; Gamiz, F. ; Jiménez-Molinos, F. ; Sampedro, C.
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A new analytical model is presented for the inversion charge of surrounding-gate transistors (SGTs). Quantum effects are taken into account by means of a modified capacitance model that includes the inversion charge centroid and a correction to the threshold voltage. A drain current model for the SGT that includes velocity saturation, short channel, and velocity overshoot effects is also developed. The model accurately reproduces both simulated and experimental results for different silicon core radii and gate voltages.

Published in:
Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 11 )

Date of Publication: Nov. 2010

Page(s):
2925 - 2933
ISSN :
0018-9383
INSPEC Accession Number:
11596978
Digital Object Identifier :
10.1109/TED.2010.2067217
Product Type:
Journals & Magazines
Date of Current Version :
21 October 2010
Issue Date :
Nov. 2010
Sponsored by :
IEEE Electron Devices Society

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