Cart (Loading....) | Create Account
Close category search window
 

Temperature-dependent device behavior in advanced CMOS technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Xiaochun Li ; Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China ; Jialing Tong ; Junfa Mao

As technology scales down, more transistors integrate in a single die and the thermal issue becomes a major concern. High operation temperature degrades performance of MOS devices and induce reliability problem. In this paper, the temperature dependence of MOS drain current is analyzed in both linear and saturation regions. It is shown that the drain current is invariable in some specific operation points but may increase or decrease in other operation points with the temperature fluctuation. These temperature-insensitive operation points are derived with analytical formulas and verified with SPICE simulation in 180-nm CMOS technology. In linear region, the temperature-invariant drain current requires a linear relationship between gate-source voltage and drain-source voltage. In saturation region, the drain current mainly relies on gate-source voltage and the temperature-insensitive gate-source voltage is a constant for a given technology. Consequently, the supply voltage can be optimized for temperature-variation-insensitive performance, which is about 42% lower than the nominal supply voltage in a 180-nm CMOS technology.

Published in:

Signals Systems and Electronics (ISSSE), 2010 International Symposium on  (Volume:2 )

Date of Conference:

17-20 Sept. 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.