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This paper presents an innovative intelligent power module in a molded dual-in-line package. It combines new reverse conducting IGBTs and a silicon-on-insulator (SOI) gate drive IC. It features internal schematics using the combination of PCB and lead-frame without using expensive heat transfer materials, such as ceramics. We provide a description of the module, its dimensions, and its internal schematics. Explanations of the gate driver and IGBT performance are followed by an application test.