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Effects of wire-bond lift-off on gate circuit of IGBT power modules

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2 Author(s)
Luowei Zhou ; Luowei Zhou /Electrical Engineering College of Chongqing Univ., Chongqing, China ; Shengqi Zhou

Wire-bond lift-off is one of the main failure mechanisms encountered in IGBT power modules, due to thermal stress subjected in operation. To evaluate reliability degradation of IGBT, phenomena of early fault phase are essential. In this paper, electrical transient response of gate driver circuit after some wire-bonds lift-off is investigated, and the deviation observed will advance the fault prognostic of IGBT as precursor.

Published in:

Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International

Date of Conference:

6-8 Sept. 2010