Cart (Loading....) | Create Account
Close category search window
 

Point defects analysis of zinc oxide thin films annealed at different temperatures with photoluminescence, Hall mobility, and low frequency noise

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ke, Lin ; Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 ; Szu Cheng Lai ; Ye, Jian Dong ; Kaixin, Vivian Lin
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3494046 

Zinc oxide (ZnO) thin films annealed at different temperatures were studied with photoluminescence (PL), electrical resistivity, Hall mobility, and 1/f noise spectroscopy. Relatively high electrical conductivity and carrier concentration in sample annealed at 400 °C suggested the presence of ZnO interstitials. Rapid reduction in electrical conductivity and carrier concentration upon increasing the annealing temperature suggested that ZnO interstitials could be eliminated by high temperature annealing. Presence of G-R noise in sample annealed at 400 °C indicated high level of electron trapping activities. Density of Zn vacancies acting as electron traps was estimated by Lorentzian fitting on the G-R noise. PL spectra exhibiting dominant green emission in all samples suggested the presence of Zn vacancies in high concentration. Yellow-orange emission in PL in samples annealed at 600 °C and below indicated the presence of O interstitials, while the same emission in samples annealed at higher temperatures were ascribed to Si impurities diffused from the substrate. Sharp reduction in mobility and surge in Hooge’s parameter in sample annealed at 700 °C implied high level of electron scattering due to large extrinsic Si impurities. Gradual rise in green-yellow emission and electron concentration as annealing temperature increased from 500 to 700 °C were ascribed to the gradual formation of O vacancies.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 8 )

Date of Publication:

Oct 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.