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Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer

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3 Author(s)
Jo, Masafumi ; National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan ; Mano, Takaaki ; Sakoda, Kazuaki

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We demonstrate the control of GaAs quantum dots morphology by using a thin AlGaAs capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides protections against thermally induced deformation up to 580 °C, which allows improved dot quality. In addition, annealing of AlGaAs-capped quantum dots at 640 °C flattens the top of the dots, leading to the formation of height-controlled quantum dots and their narrow inhomogeneous width of 28 meV.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 8 )