By Topic

Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Jo, Masafumi ; National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan ; Mano, Takaaki ; Sakoda, Kazuaki

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We demonstrate the control of GaAs quantum dots morphology by using a thin AlGaAs capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides protections against thermally induced deformation up to 580 °C, which allows improved dot quality. In addition, annealing of AlGaAs-capped quantum dots at 640 °C flattens the top of the dots, leading to the formation of height-controlled quantum dots and their narrow inhomogeneous width of 28 meV.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 8 )