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All-Optical Cross-Phase Modulation Generation by Ion Implantation in III–V Quantum Wells

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6 Author(s)
Cong, Guangwei ; Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan ; Akimoto, R. ; Gozu, S. ; Mozume, Teruo
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Ultrafast all-optical cross-phase modulation (XPM) associated with intersubband transition was generated by silicon ion implantation in undoped InGaAs-AlAsSb coupled double quantum wells. This transverse-magnetic-pump-induced XPM for transverse-electric probe has spectral and temporal features superior to other polarization combinations. The XPM power efficiency in the 500- μm-long implanted waveguide was evaluated to be ~ 0.054 rad/pJ . This technique based on ion implantation can be used to monolithically integrate the novel XPM with other quantum-well-based functional modules.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 24 )