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\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As} Tunneling Field-Effect Transistors With an I_{\rm on} of 50 \mu\hbox {A}/\mu\hbox {m} and a Subthreshold Swing of 86 mV/dec Using \hbox {HfO}_{2} Gate Oxide

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6 Author(s)
Han Zhao ; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA ; Y. Chen ; Y. Wang ; F. Zhou
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Vertical In0.7Ga0.3As tunneling field-effect transistors are demonstrated with a high on-current of 50 μA / μm (in comparison to reported values) and a minimum subthreshold swing (SS) of 86 mV/dec using atomic-layer-deposited HfO2 gate oxide. The tunneling diodes exhibit the gate-bias-dependent Esaki diode behavior with a negative differential resistance under the forward diode bias at various temperatures, which confirms that the conduction mechanism is, indeed, band-to-band tunneling. The effects of equivalent oxide thickness scaling and various temperatures on the on-current and the SS are also investigated.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 12 )