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\hbox {Al}_{2}\hbox {O}_{3} -Based RRAM Using Atomic Layer Deposition (ALD) With 1- \mu\hbox {A} RESET Current

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3 Author(s)
Yi Wu ; Electrical Engineering Department, Stanford University, Stanford, CA, USA ; Byoungil Lee ; H. -S. Philip Wong

Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (~1 μA) was obtained, together with adequate voltage margin.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 12 )