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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:31 Issue:12 Help

\hbox {Al}_{2}\hbox {O}_{3} -Based RRAM Using Atomic Layer Deposition (ALD) With 1- \mu\hbox {A} RESET Current

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3 Author(s)
Yi Wu ; Electr. Eng. Dept., Stanford Univ., Stanford, CA, USA ; Byoungil Lee ; Wong, H.-S.P.

Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (~1 μA) was obtained, together with adequate voltage margin.

Published in:
Electron Device Letters, IEEE  (Volume:31 ,  Issue: 12 )

Date of Publication: Dec. 2010

Page(s):
1449 - 1451
ISSN :
0741-3106
INSPEC Accession Number:
11661410
Digital Object Identifier :
10.1109/LED.2010.2074177
Date of Publication :
18 October 2010
Date of Current Version :
22 November 2010
Issue Date :
Dec. 2010
Sponsored by :
IEEE Electron Devices Society

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