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A fully integrated, highly linear SiGe BiCMOS class-AB power amplifier targeting 2.4GHz applications

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11 Author(s)
Zhang Shulin ; Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China ; Su Jie ; Chen Lei ; Tian Liang
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This paper presents a 2.4 GHz fully integrated power amplifier based on 0.18 μm SiGe BiCMOS technology for wireless local area network applications. The power amplifier shows a 1 dB compression output power of 22.19 dBm at an input power of 0.135 dBm. A temperature-insensitive bias circuit is used in this PA design to improve the amplifier linearity. The total fabricated die size is about 1.5 mm × 1.2 mm. The designed PA based on SiGe BiCMOS technology demonstrates a competitive linearity performance compared with GaAs, when considering the factors of cost and process complexity.

Published in:

Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in

Date of Conference:

22-24 Sept. 2010