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A 20–32-GHz Wideband Mixer With 12-GHz IF bandwidth in 0.18- \mu{\hbox {m}} SiGe Process

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3 Author(s)
Mohamed El-Nozahi ; Marvell Semiconductor, Santa Clara, CA, USA ; Edgar ?nchez-Sinencio ; Kamran Entesari

This paper presents a 20-32-GHz wideband BiCMOS mixer with an IF bandwidth of 12 GHz. The mixer utilizes an inductive peaking technique to extend the bandwidth of the downconverted IF signal. To our knowledge, the proposed mixer achieves the widest IF bandwidth using silicon-based technologies in K-band. Analytical expressions for the conversion gain and output noise of the proposed mixer are presented. The wideband mixer is implemented using 0.18-μm BiCMOS technology and occupies an area of 0.19 mm2. It achieves a conversion gain of 3 dB, a noise figure between 10.5 and 13.0 dB, and an IIP3 higher than 0.5 dBm with a power consumption of 18 mW from a 1.8-V supply.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:58 ,  Issue: 11 )