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Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

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4 Author(s)
Yung-Jr Hung ; Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan ; San-Liang Lee ; Thibeault, Brian J. ; Coldren, L.A.

A novel and simple approach is demonstrated for fabricating silicon nanowire arrays (SNWAs) with controllable sidewall profiles. A single-step deep-reactive-ion etching (SDRIE) is used to transfer the holography patterned photoresist template to silicon or silicon-on-insulator substrates. With the SDRIE etching process, scalloping of the sidewalls can be avoided while reserving the high-mask selectivity over resist and high-etching rate. The sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of the process. A modified-SDRIE process with a linearly changed gas flow is further developed to extend its capability. A post-high-energy argon plasma treatment is used to create sharp tips on the top of SNWAs and to increase the filling factor. Broadband antireflective (AR) window with a low reflectivity can be realized from tall SNWAs with high-filling factor. Depositing silicon dioxide over SNWAs can further enhance the AR performance. The position and bandwidth of the AR window can be controlled by tuning the SNWA parameters.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 4 )

Date of Publication:

July-Aug. 2011

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