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Proposal of a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions

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2 Author(s)
Sakamoto, H. ; Renesas Electron. Corp., Kawasaki, Japan ; Iizuka, T.

Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting accuracy is quantified with a logarithmic deviation of simulated characteristics (such as current) from their measurement counterparts, normalized with the logarithmic deviation amplitude estimated with process-skewed parameters (corner model). The use of this new metric successfully captures, in all MOSFET operation regions, a “hot spot” where fitting accuracy is compromised. With this knowledge, circuit designers would be able to take a necessary precaution by adding a right amount of margin on top of existing ones.

Published in:

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Date of Conference:

6-8 Sept. 2010