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Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks

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4 Author(s)
Niessner, M. ; Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany ; Schrag, G. ; Wachutka, G. ; Iannacci, J.

We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.

Published in:

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Date of Conference:

6-8 Sept. 2010