By Topic

Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
K. Sarpatwari ; Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, USA ; O. O. Awadelkarim ; L. J. Passmore ; T. -T. Ho
more authors

We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 4 )