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An SNM estimation and optimization model for ULP sub-45nm CMOS SRAM in the presence of variability

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4 Author(s)
Makosiej, A. ; Inst. Super. d ''Electron. de Paris, Paris, France ; Vladimirescu, A. ; Thomas, O. ; Amara, A.

This paper presents a universal optimization model for Static Noise Margin (SNM) of Ultra Low Power (ULP) CMOS SRAMs in the presence of statistical variations. Distributions of retention and read SNM derived analytically, are analyzed as a function of the threshold voltages of the N and PMOS devices. The proposed model implemented in Matlab is applied to optimize yield by maximizing the μ/6σ of SNM in the presence of local statistical VT variation of 3σ.

Published in:

NEWCAS Conference (NEWCAS), 2010 8th IEEE International

Date of Conference:

20-23 June 2010

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