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Accurate active device characterization for a 60GHz 65nm-CMOS Power Amplifier realization

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4 Author(s)
Sofiane Aloui ; IMS laboratory, UMR CNRS 5218, University of Bordeaux, 33405 Talence Cedex, France ; Eric Kerherve ; Robert Plana ; Didier Belot

A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicro-electronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power transistor. The PA is optimized to deliver the maximum saturated output power (Psat) under class A biasing. The PA offers a Psat of 8.2dBm, an Output Compression Point (OCP1) of 5dBm and a gain of 5.7dB. The die area is 0.29mm2 with pads.

Published in:

NEWCAS Conference (NEWCAS), 2010 8th IEEE International

Date of Conference:

20-23 June 2010