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A Fully Integrated SiGe BiCMOS Power Amplifier for 2.4GHz Wireless-LAN Application

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5 Author(s)
Ying Ruan ; Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China ; Lei Chen ; Liang Tian ; Yan-hua Liu
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A 2.4GHz power amplifier (PA) for Wireless-LAN application is designed and implemented in 0.18μm SiGe BiCMOS technology. Without any off-chip component or band wire for matching, the proposed power amplifier is fully integrated, which has a two-stage structure with temperature-insensitive biasing circuit to improve the linearity with almost no increase in die area. S parameter simulation results show that input impedance matching S11 and output impedance matching S22 is less than -13dB and -20dB respectively. The power amplifier has a power gain of 27.3dB, output 1dB compression point of 23.2dBm, and a power added efficiency(PAE) of 21.3%.The area of the die is 1148×1140μm2 with all elements integrated on a single chip.

Published in:

2010 6th International Conference on Wireless Communications Networking and Mobile Computing (WiCOM)

Date of Conference:

23-25 Sept. 2010