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Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

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5 Author(s)
Willems van Beveren, L.H. ; Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney 2052, Australia ; Tan, K.Y. ; Lai, N.S. ; Dzurak, A.S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3501136 

We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a high density at the Ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 15 )

Date of Publication:

Oct 2010

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