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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

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3 Author(s)
Yongshun Sun ; Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore Science Park II, 117685, with CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore ; Rusli ; Navab Singh

We report on room-temperature operation of Si nanowires (SiNWs) based single-electron transistors (SETs) fabricated based on the top-down approach using conventional optical lithography. The SETs exhibit strong Coulomb oscillation at room temperature due to extreme small size of SiNW, which has a diameter of 4 nm. The optical lithography approach is attractive compared to the commonly used electron beam lithography for the fabrication of SETs because it offers the possibility of integrating Si single-electron electronics with CMOS technology.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 1 )