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A 1.2-V 10- \mu W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 ^{\circ} C (3 \sigma ) From - 70 ^{\circ} C to 125 ^{\circ} C

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6 Author(s)
Sebastiano, F. ; NXP Semicond., Eindhoven, Netherlands ; Breems, L.J. ; Makinwa, K.A.A. ; Drago, S.
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An NPN-based temperature sensor with digital output has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of (3σ ) and a trimmed inaccuracy of (3σ) over the temperature range from to 125 . This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e., correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 from a 1.2-V supply and occupies an area of 0.1 mm2

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 12 )

Date of Publication:

Dec. 2010

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