Cart (Loading....) | Create Account
Close category search window
 

Current Switching in MgO-Based Magnetic Tunneling Junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wenzhong Zhu ; Seagate Technol., Bloomington, MN, USA ; Hai Li ; Yiran Chen ; Xiaobin Wang

Spin-transfer induced magnetization switching in a MgO-based magnetic tunneling junction (MTJ) has been measured over a wide time range. It was found that the switching current response is asymmetric going from the high resistance state to the low resistance state and vice versa. This asymmetry must be taken into consideration to optimize the read-write margin for a 1T1R (single transistor, single MTJ) memory device design, especially since the driving current that the transistor can supply is also asymmetric. The MTJ and the transistor characteristics need to be adjusted so that the spin-transfer switching current asymmetry matches the transistor driving current asymmetry at the desired operating speed. A new device configuration is proposed to achieve this optimization.

Published in:

Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 1 )

Date of Publication:

Jan. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.