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In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.