Nanolocalization of features in the patterns produced by Four-beam Laser Interference Lithography

This paper presents a method for nanolocalization of features in the patterns produced by Four-beam Laser Interference Lithography (FBLIL) using image processing techniques. In the work, the least-squares fitting method was used for nanolocalization of features, having obtained the main parameters of the pattern by both simulation and experiment. The results have shown that the method is useful for the nanolocalization of the pattern features in laser interference lithography.