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An original source- and load-pull topology based on a passive technique is presented in this paper. The proposed system consists of passive tuners and loop structures. The use of a passive loop structure in cascade with a passive tuner allows for synthesis of reflection coefficients in the order of 0.97 magnitudes at the device under test's access plane. The measurement and characterization results of a 1W GaAs MESFET device show an improvement of 0.9 dB in the gain and 6% in the power-added efficiency when the proposed impedance synthesis techniques are used.