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Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process

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7 Author(s)
Nah, Junghyo ; Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA ; En-Shao Liu ; Varahramyan, K.M. ; Dillen, D.
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We report the enhanced performance of Ge nanowire (NW) tunneling field-effect transistors (TFETs), realized using a millisecond flash-assisted rapid thermal process (fRTP) for dopant activation. The electrical characteristics of our fRTP-activated NW TFETs exhibit maximum drive currents up toImax ~ 28 μA/μm at Vdd = -3 V and improved subthreshold swings. By comparison, NW TFETs realized using conventional RTP for dopant activation show an order of magnitude lower current. We attribute these findings to a more abrupt doping profile at the tunnel junction, owing to reduced dopant diffusion and improved dopant activation.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 12 )

Date of Publication:

Dec. 2010

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