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We report the properties of a MANAS (Metal/Al2O3/Nitride/Al2O3/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al2O3/Nitride/SiO2/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD_Al2O3, as well as its relatively high conduction band offset and low valence band offset.
Date of Publication: Dec. 2010