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Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

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9 Author(s)
Cantley, K.D. ; Department of Electrical Engineering, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, USA ; Subramaniam, A. ; Pratiwadi, Ramapriyan R. ; Floresca, Herman Carlo
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Hydrogenated amorphous silicon nanowire field-effect transistors (a-Si:H NWFETs) with Schottky source/drain junctions have been fabricated with a simple process involving maximum temperatures of 250 °C. Electrical characteristics of devices with various numbers of wires and different linewidths are analyzed. The NWFETs with small effective channel width demonstrate improved subthreshold slope and field-effect mobility as compared to wider devices. Additionally, the on-current scales linearly with effective channel width. Possible explanations for these effects are discussed, and applications of a-Si:H NWFETs are presented.

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Applied Physics Letters  (Volume:97 ,  Issue: 14 )