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Physic-based formulations for the high-frequency noise characteristics of nanometer MOSFETs working at saturation are developed. In the derivation, field-dependent mobility, as well as carrier heating effect in the gradual channel approximation region, is taken into account. In addition, diffusion noise due to velocity saturation carriers in the high electric field region is calculated using Statz's drifting dipole theory. Excellent agreement between the proposed model and experimental noise data for 120-nm MOSFET technology was obtained over device sizes, biases, and frequencies up to 26 GHz. The analytical noise model can be incorporated into any compact model to enable first-pass silicon design of microwave circuit.