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18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

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9 Author(s)
Feng, Z.H. ; Nat. Key Lab. of Applic. Specific Integrated Circuit, Hebei Semicond. Res. Inst., Shijiazhuang, China ; Zhou, R. ; Xie, S.Y. ; Yin, J.Y.
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Enhancement-mode (E-mode) AlGaN/GaN heterojunction field effect transistors (HFETs) with a nominal gate length of 0.35 μm are fabricated on a SiC substrate by fluorine plasma ion implantation without the use of gate recess. The threshold voltage is measured to be +0.2 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a saturation drain current density of 735 mA/mm at a gate bias of 4 V, a peak transconductance of 269 mS/mm, a current-gain cutoff frequency (fT) of 39 GHz, and a maximum oscillation frequency (fmax) of 91 GHz. At 18 GHz, the fabricated E-mode device exhibits a maximum output power density of 3.65 W/mm, a linear gain of 11.6 dB, and a peak power-added efficiency of 42%. This is the first report of the large-signal performance of AlGaN/GaN E-mode HFETs in the Ku-band.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 12 )