Cart (Loading....) | Create Account
Close category search window

Surface damages in diamond by Ar/O2 plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Denisenko, A. ; Institute of Electron Devices and Circuits, University of Ulm, 89069 Ulm, Germany ; Romanyuk, A. ; Pietzka, C. ; Scharpf, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Epitaxial single crystal and boron-doped diamond layers were exposed to reactive ion etching in Ar/O2 plasma (rf power of 25 W and self-bias of 100 V); and the electrical, structural, and electrochemical characteristics of the exposed surface were investigated. Angle-resolved x-ray photoemission spectroscopy (XPS) measurements revealed a nonuniform layer of amorphous carbon at the exposed surface with an average thickness of approximately 4 nm, as confirmed also by atomic force microscopy profiling of selectively etched areas. On highly boron-doped diamond, the plasma-induced damages resulted also in a nonconductive surface layer. This damaged and insulating surface layer remained resistant to graphite-etching chemicals and to rf oxygen plasma but it was removed completely in microwave hydrogen plasma at 700 °C. The surface characteristics after the H-plasma process followed by wet chemical oxidation were restored back to the initial state, as confirmed by XPS. Such “recovery” treatment had been applied to an all-diamond submicrometer electrode array initially patterned by an Ar/O2 plasma etching. The electrochemical characteristics of this electrode array were improved by more than two orders of magnitude, approaching theoretical limit for the given geometrical configuration.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 7 )

Date of Publication:

Oct 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.