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The electrical response of two-port photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of the nanowire devices showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. Two different two-port microwave network models were used to extract microwave circuit parameters in the photoconductive and dark states. After illumination, the GaN nanowire devices showed a measurable increase in shunt capacitance and decreases in both the contact and nanowire resistances.