Referenced Items are not available for this document.
In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the top-down processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
11
)
Date of Publication: Nov. 2010
- Page(s):
- 1317 - 1319
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11597080
- Digital Object Identifier :
- 10.1109/LED.2010.2070833
- Product Type:
- Journals & Magazines
- Date of Publication :
- 04 October 2010
- Date of Current Version :
- 21 October 2010
- Issue Date :
- Nov. 2010
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
