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In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the top-down processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.