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Low-Power and Highly Uniform Switching in  \hbox {ZrO}_{2} -Based ReRAM With a Cu Nanocrystal Insertion Layer

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10 Author(s)
Liu, Qi ; Key Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China ; Long, Shibing ; Wei Wang ; Tanachutiwat, S.
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In this letter, the insertion of a Cu nanocrystal (NC) layer between the Pt electrode and ZrO2 film is proposed as an effective method to improve resistive switching properties in the ZrO2-based resistive switching memory. This Cu/ZrO2:Cu/Cu NC/Pt memory exhibits asymmetric nonpolar resistive switching behavior, low operating voltage (<; 1.2 V), low Reset current (<; 50 μA), and high uniformity of resistance switching. The switching mechanism is believed to be related with the formation and rupture of conductive filament. The NC-induced electrical field enhancement has the benefit to accelerate and control the CF formation process, thus leading to low-switching threshold voltage and high uniformity.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 11 )