By Topic

Simulated plasma immersion ion implantation processing of thin wires

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Lejars, A. ; Centre de Recherche Public-Gabriel Lippmann, Belvaux 4422, Luxembourg ; Manova, D. ; Mandl, S. ; Duday, D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In plasma immersion ion implantation, the dependencies of sheath expansion and ion flux density on substrate geometry are well established. However, effects of extreme diameter variations have not been investigated explicitly. Using an analytical simulation code assuming an infinite mean free path, the sheath expansion, ion flux density, and resulting substrate temperature are explored down to wire diameters of 150 μm. Comparing the results for planar substrates and cylindrical, thin wires, a reduction in the sheath width up to a factor of 10, a faster establishing of a new equilibrium sheath position, and an increase in the ion fluence by a factor of 100 is encountered. The smaller plasma sheath allows for a denser packing of wires during the treatment than for planar substrates. Additionally, the implantation time is reduced, allowing a fast wire transport through the chamber, further increasing the throughput.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 6 )