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An SPDT transmit/receive (T/R) switch for X-band on-chip radar applications is proposed with the combination of new techniques. These methodologies include optimisation of the transistor widths for lower insertion loss (IL) while preserving high isolation and using a parallel resonance technique to improve isolation. Also, techniques such as applying DC bias to source and drain, using on-chip impedance transformation networks (ITN) and body-floating are used to improve power handling capability (P1dB) of the switch. All these techniques result in the switch with insertion loss less than 1.3 dB, isolation between transmit and receive ports better than 29.2 dB, 29 dBm input P1dB and return loss of better than 22 dB from 8 to 12 GHz in 0.44 mm2 chip area.