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Silicon raised strip waveguides based on silicon and silicon dioxide thermal bonding

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5 Author(s)
Zhao, C.Z. ; Microelectron. Inst., Xidian Univ., Xi'an, China ; Liu, E.K. ; Li, G.Z. ; Li, N.
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Si raised strip waveguides on SiO2 have been proposed and fabricated, which are based on silicon-on-insulator (SOI) material. In the waveguides, the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. An anisotropic etchant is used to produce the trapezoidal Si raised strip waveguides by etching the Si film down to the SiO2 etch-stop buried layer. The transmission losses of the Si waveguides are measured to be less than 0.2 dB/cm at the 1.3 μm wavelength for the lowest mode TE-like mode.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 4 )