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A Low-Power Fast-Transient 90-nm Low-Dropout Regulator With Multiple Small-Gain Stages

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3 Author(s)
Ho, M. ; Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China ; Ka Nang Leung ; Ki-Leung Mak

A power-efficient 90-nm low-dropout regulator (LDO) with multiple small-gain stages is proposed in this paper. The proposed channel-resistance-insensitive small-gain stages provide loop gain enhancements without introducing low-frequency poles before the unity-gain frequency (UGF). As a result, both the loop gain and bandwidth of the LDO are improved, so that the accuracy and response speed of voltage regulation are significantly enhanced. As no on-chip compensation capacitor is required, the active chip area of the LDO is only 72.5 μm × 37.8 μm. Experimental results show that the LDO is capable of providing an output of 0.9 V with maximum output current of 50 mA from a 1-V supply. The LDO has a quiescent current of 9.3 μA, and has significantly improvement in line and load transient responses as well as performance in power-supply rejection ratio (PSRR).

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 11 )