By Topic

Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cheng-Chang Chen ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Jun-Rong Chen ; Yi-Chun Yang ; Shih, M.H.
more authors

In this study, we demonstrated two-dimensional (2-D) photonic crystal band-edge coupling operation in the ultraviolet wavelength range. The light extraction enhancement was obtained from the photonic crystal structure with an ultraviolet AlN/AlGaN distributed Bragg reflector (UVDBR). The DBR provides a high reflectivity of 85% with 15-nm stopband width. A fivefold enhancement in photoluminescence emission was also achieved compared with the emission from the unpatterned area on the same sample at 374 nm wavelength. We also study the photonic crystal bandedge coupling with finite-difference time-domain and plane-wave expansion methods.

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 22 )