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A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

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6 Author(s)
Marchi, M.Claudia ; INQUIMAE–DQIAyQF, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellón II, C1428EHA Buenos Aires, Argentina ; Bilmes, Sara A. ; Ribeiro, C.T.M. ; Ochoa, E.A.
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A comprehensive study of nonstoichiometry titanium oxide thin films (TiOx, 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO2 particles during coalescence.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 6 )