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Residual stress characterization of GaN microstructures using bent-beam strain sensors

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6 Author(s)
Jianan Lv ; Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China ; Zhenchuan Yang ; Guizhen Yan ; Yong Cai
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Due to the thermal mismatch between GaN and Si, GaN grown on Si at elevated temperatures (~1100 °C) usually exhibits large internal residual stress. Therefore, the characterization of residual stress in GaN on Si substrate is of particular importance. In this work, a type of reliable bent-beam strain sensor was used to estimate residual stress in suspended GaN microstructures. The device was modeled by finite element method (FEM) and was fabricated by a dry-etch-only deep-releasing technique featuring a combination of anisotropic and isotropic Si etching. Results were analyzed and an averaged residual stress value of ~575 ± 5 MPa was estimated for the GaN sample used in this work.

Published in:

Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on

Date of Conference:

20-23 Jan. 2010

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