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ESD evaluation methods for a charged device model

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1 Author(s)
T. Wada ; Matsushita Electron. Corp., Nagaokakyo, Japan

Through the investigation of several evaluation methods for charged device model (CDM) ESD, the following results have been found: (1) although the waveforms of the small capacitance method (SCM-10 pF, 0 Ω) and three commercial pieces of CDM equipment are different, the destructive voltage for dielectric failure are equivalent. SCM is an efficient and easy test method for high-speed ESD evaluation; (2) it is necessary to apply a different ESD protection strategy and circuit for CDM and SCM than for the human body model (HEM); (3) the destructive voltage for memory devices on the market ranges from 350 V to 4000 V

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IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C  (Volume:19 ,  Issue: 3 )